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Surface Technology Systems PLC. (STS)
  • Compound Semiconductor Technologies
The demand for III-V based devices has grown at an unprecedented rate over the last few years fueled by the ever expanding mobile communications market. At present GaAs based technologies are at the heart of this revolution, enabling new generation handsets to operate at lower power consumption, offer more functionality and occupy less space. STS is well established as a supplier of production etch and deposition equipment to the Compound Semiconductor industry with a full range of processes from routine backside via etching to more intricate LASER or LED heterostructure etching.

InP and its related ternary and quaternary alloys have found wide spread use in optoelectronic and electronic devices. For example, InP is often the substrate of choice in growth of laser structures, and devices formed from InGaAs-InGaAsP grown on InP have been essential to the ongoing development of long distance optical telecommunications systems. Furthermore, the very high frequency and high power capability of devices based on InP, mean that it is becoming increasingly important in development of electronic devices such as heterojunction bipolar transistors (HBTs).

GaN is another material that is becoming increasingly popular in new device fabrication. Light Emitting Diodes (LEDs) and wide bandgap RF power devices are just two examples where a GaN facet etch is required and STS has developed an extremely versatile GaN etch process that is now being used in the production of GaN based LEDs at a number of facilities worldwide.

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