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	Surface Technology Systems PLC. (STS)
	MEMS Applications

		STS'Advanced Silicon Etch (ASE™)for the fabrication of Micro-Electro-Mechanical Systems (MEMS) provides the significant improvements in etch anisotropy long awaited by the MEMS community. Using this technique, it is finally possible to achieve the profiles required to fabricate micromachine devices such as pressure sensors, accelerometers,gyroscopes, ink-jet printer heads,back-etched Cavity-Devices, precision spectro-photometer slits, microactuator, Micromotor&Microturbine components. In response to the MEMS industry's requirement for a dry release system for surface micromachined devices, STS launched the first commercially available Xenon Difluoride (XeF2) source in 1998. The XeF2 source provides good silicon etch rates and as it is a plasma-free system, has extremely high selectivity to most materials as well as compatibility with CMOS or integrated MEMS devices. STS' latest product, developed specifically for the MEMS market, is the Advanced Oxide Etch (AOE) process for deep, high rate etching of SiO2 and quartz. This key to the success of the new source and the driving force for its design is the significant extension in the Mean Time Between Cleans when compared with conventional Inductively Coupled Plasma (ICP) or Reactive Ion Etch (RIE) technologies. For many MEMS applications this clearly identifies the new source as an enabling technology and creates opportunities for MEMS manufacturers to develop devices which, up until now, have been limited by the available technology. Further MEMS applications covered by STS process technology are Plasma Enhanced Chemical Vapour Deposition (PECVD) of low stress nitride, SiN and SiC etch.
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