CMP

For both dielectric and metal removal and maintaining flat (planar) surfaces, chemical mechanical planarization (CMP) is a critical process. CMP emerged as a necessary process to keep layers planar for subsequent lithography steps as depth-of-field limitations impact yield. A typical IC can have from 3 – 20 layers, each requiring a CMP step to advance further processing. This makes CMP a key, and large segment of semiconductor equipment industry. CMP processes continue to grow in importance for semiconductor manufacturing.

Our production-proven CMP equipment is ideal for a broad range of applications including oxide, silicon oxide, silicon nitride, tungsten, polysilicon, SOI, AlTiC, SiC, quartz, glass, aluminum nitride, gallium arsenide-based devices, lithium niobate and lithium tantalite-based devices, and other thin films.   With over twenty years of CMP process experience, our applications engineers are ready to assist you in developing a process that achieves your requirements.

6EC-II

6DS-SP

6DZ

BACK